TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 0.28 Ω |
Polarity | P-Channel |
Power Dissipation | 40 W |
Drain to Source Voltage (Vds) | -50.0 V |
Continuous Drain Current (Ids) | -9.70 A |
Rise Time | 57 ns |
Fall Time | 25 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 40 W |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 10.51 mm |
Size-Width | 4.65 mm |
Size-Height | 15.49 mm |
Operating Temperature | -55℃ ~ 150℃ |
Vishay Semiconductor
7 Pages / 0.12 MByte
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Power Field-Effect Transistor, 9.7A I(D), 50V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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