TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 18.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.29 Ω |
Polarity | N-Channel |
Power Dissipation | 200 W |
Threshold Voltage | 5 V |
Input Capacitance | 2830pF @25V |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Continuous Drain Current (Ids) | 17.0 A |
Rise Time | 60 ns |
Fall Time | 30 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Size-Length | 10.51 mm |
Size-Width | 4.7 mm |
Size-Height | 15.49 mm |
Operating Temperature | -55℃ ~ 150℃ |
The IRFB18N50KPBF is a 500V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
● Low RDS (ON)
Vishay Semiconductor
10 Pages / 0.29 MByte
Vishay Semiconductor
20 Pages / 2.6 MByte
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