| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.21 Ω |
| Polarity | N-Channel |
| Power Dissipation | 280 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 74 ns |
| Input Capacitance (Ciss) | 2870pF @25V(Vds) |
| Input Power (Max) | 280 W |
| Fall Time | 33 ns |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 280W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRFB20N50KPBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
● Simple drive requirements
● Low RDS (ON)
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