TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 25.0 V |
Current Rating | 35.0 A |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0116 Ω |
Polarity | N-Channel |
Power Dissipation | 39 W |
Threshold Voltage | 1.5 V |
Input Capacitance | 845 pF |
Gate Charge | 18.0 nC |
Drain to Source Voltage (Vds) | 25 V |
Breakdown Voltage (Drain to Source) | 25.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 35.0 A |
Rise Time | 22 ns |
Input Capacitance (Ciss) | 845pF @13V(Vds) |
Input Power (Max) | 39 W |
Fall Time | 32 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 39 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The FDD8778 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low RDS (ON).
● Low gate charge
● Low gate resistant
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