| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 150 V |
| Current Rating | 23.0 A |
| Case/Package | TO-220 |
| Polarity | N-Channel |
| Power Dissipation | 3.80 W |
| Part Family | IRFB23N15D |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Continuous Drain Current (Ids) | 23.0 A |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Fall Time | 8.4 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fully Characterized Avalanche Voltage and Current
● Low Gate-to-Drain Charge to Reduce Switching Losses
● Fully Characterized Capacitance Including Effective Coss to Simplify Design
Infineon
12 Pages / 0.14 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
Power MOSFET(Vdss=150V/ Rds(on)max=0.09Ω/ Id=23A)
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.09Ω, Id=23A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.09Ω; ID 23A; TO-220AB; PD 136W; VGS +/-30V
International Rectifier
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagem
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
