| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Polarity | N-CH |
| Power Dissipation | 3100 mW |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 31A |
| Rise Time | 38 ns |
| Input Capacitance (Ciss) | 2370pF @25V(Vds) |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fully Characterized Avalanche Voltage and Current
● Low Gate-to-Drain Charge to Reduce Switching Losses
● Fully Characterized Capacitance Including Effective Coss to Simplify Design
Infineon
12 Pages / 0.13 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.082Ω, Id=31A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.082Ω; ID 31A; TO-220AB; PD 200W; VGS +/-30V
International Rectifier
Trans MOSFET N-CH 200V 31A 3Pin(3+Tab) TO-220AB
IFC
N-Channel 200V 0.082Ω 70NC Flange Mount Hexfet Power Mosfet - TO-220AB
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