| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 60 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0725 Ω |
| Polarity | N-Channel |
| Power Dissipation | 60 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 18A |
| Rise Time | 28 ns |
| Input Capacitance (Ciss) | 550pF @50V(Vds) |
| Input Power (Max) | 60 W |
| Fall Time | 3.9 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB4212PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 150W per channel into 4R load in half-bridge topology. It is suitable for full-bridge and push-pull application.
● Low RDS (ON) for improved efficiency
● Low Qg and Qsw for better THD and improved efficiency
● Low QRR for better THD and lower EMI
Infineon
8 Pages / 0.28 MByte
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270 Pages / 11.59 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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6 Pages / 0.25 MByte
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1 Pages / 0.14 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 58Milliohms; ID 18A; TO-220AB; PD 60W; gFS 11S
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