| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 330 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.015 Ω |
| Polarity | N-Channel |
| Power Dissipation | 330 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 85A |
| Rise Time | 60 ns |
| Input Capacitance (Ciss) | 4460pF @50V(Vds) |
| Input Power (Max) | 350 W |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB4321PBF is a HEXFET® single N-channel Power MOSFET offers low gate charge improves the switching performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Low RDS (ON) reduces losses
● Improved diode recovery improves switching and EMI performance
● 30V Gate voltage rating improves robustness
● Fully characterized avalanche SOA
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International Rectifier
Trans MOSFET N-CH 150V 85A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans MOSFET N-CH 150V 83A 3Pin(3+Tab) TO-220AB
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