TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 294 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.00125 Ω |
Polarity | N-Channel |
Power Dissipation | 294 W |
Threshold Voltage | 3 V |
Input Capacitance | 10820 pF |
Drain to Source Voltage (Vds) | 40 V |
Breakdown Voltage (Drain to Source) | 40 V |
Continuous Drain Current (Ids) | 317A |
Rise Time | 68 ns |
Input Capacitance (Ciss) | 10820pF @25V(Vds) |
Input Power (Max) | 294 W |
Fall Time | 68 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 294W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 4.83 mm |
Size-Height | 16.51 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB7434PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
10 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
2 Pages / 0.06 MByte
Infineon
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package
International Rectifier
TO220/MOSFET, 40V, 195A, 1.6MOHM, 216NC QG
Infineon
MOSFET MOSFET, 40V, 195A, 1 216NC Qg, TO-220AB
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.