| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.00165 Ω |
| Polarity | N-Channel |
| Power Dissipation | 375 W |
| Threshold Voltage | 3.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Input Capacitance (Ciss) | 13703pF @25V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 294 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 16.51 mm |
●StrongIRFET™ Power MOSFET, Infineon
●Infineon"s StrongIRFET™ family is optimized for Low RDS(on) and High Current Carrying capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
International Rectifier
12 Pages / 0.63 MByte
Infineon
60V Single N-Channel HEXFET Power MOSFET in a TO-220 package
International Rectifier
Trans MOSFET N-CH 60V 295A 3Pin(3+Tab) TO-220AB Tube
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