| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 174 A |
| Part Family | IRFBA1405P |
| Drain to Source Voltage (Vds) | 55.0 V |
| Continuous Drain Current (Ids) | 174 A |
| Rise Time | 190 ns |
Description
●Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche.
●Benefits
●Advanced Process Technology
●Ultra Low On-Resistance
●Dynamic dv/dt Rating
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
●Typical Applications
●Electric Power Steering (EPS)
●Anti-lock Braking System (ABS)
●Wiper Control
●Climate Control
●Power Door
International Rectifier
9 Pages / 0.12 MByte
International Rectifier
9 Pages / 0.12 MByte
International Rectifier
Trans MOSFET N-CH 55V 174A 3Pin(3+Tab) TO-273AA Tube
International Rectifier
MOSFET N-CH 55V 174A SUPER-220
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