| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 174 A |
| Case/Package | TO-273-3 |
| Drain to Source Resistance (on) (Rds) | 5 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 330 W |
| Part Family | IRFBA1405P |
| Input Capacitance | 5480pF @25V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 174 A |
| Rise Time | 190 ns |
| Input Capacitance (Ciss) | 5480pF @25V(Vds) |
| Input Power (Max) | 330 W |
| Fall Time | 110 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 330000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 11 mm |
| Size-Height | 15 mm |
| Operating Temperature | -55℃ ~ 175℃ |
Description
●Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche.
●Benefits
●Advanced Process Technology
●Ultra Low On-Resistance
●Dynamic dv/dt Rating
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
●Typical Applications
●Industrial Motor Drive
International Rectifier
10 Pages / 0.21 MByte
International Rectifier
Trans MOSFET N-CH 55V 174A 3Pin(3+Tab) TO-273AA Tube
International Rectifier
MOSFET N-CH 55V 174A SUPER-220
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