TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 4 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 1.00 A |
Case/Package | DIP-4 |
Power Rating | 1.3 W |
Number of Positions | 4 Position |
Drain to Source Resistance (on) (Rds) | 0.54 Ω |
Polarity | N-Channel |
Power Dissipation | 1.3 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 1.00 A |
Rise Time | 16 ns |
Input Capacitance (Ciss) | 180pF @25V(Vds) |
Input Power (Max) | 1.3 W |
Fall Time | 9.4 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.3 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 6.29 mm |
Size-Height | 3.37 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Minimum Packing Quantity | 2500 |
VISHAY
9 Pages / 0.14 MByte
VISHAY
10 Pages / 0.14 MByte
Vishay Siliconix
MOSFET N-CH 100V 1A 4-DIP
International Rectifier
MOSFET N-CH 100V 1A 4-DIP
VISHAY
MOSFET N-CH 100V 1A 4-DIP
Vishay Semiconductor
MOSFET N-CH 100V 1A 4-DIP
Intersil
1A, 100V, 0.6Ω, N-Channel Power MOSFET
International Semiconductor
VISHAY
HVMDIP-4 N-CH 100V 1A 540mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 1A; HD-1; PD 1.3W; VGS +/-20V; VF 2.
Vishay Siliconix
MOSFET N-CH 100V 1A 4-DIP
International Rectifier
MOSFET N-CH 100V 1A 4-DIP
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.