| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | HVMDIP-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.27 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.3 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 1.30 A |
| Operating Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,
●ruggedized device design, low on-resistance and cost-effectiveness.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• For Automatic Insertion
●• End Stackable
●• 175 °C Operating Temperature
●• Fast Switching
●• Ease of Paralleling
●• Lead (Pb)-free Available
Vishay Semiconductor
10 Pages / 1.79 MByte
Vishay Semiconductor
9 Pages / 1.79 MByte
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