TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 4 Pin |
Case/Package | HVMDIP |
Number of Positions | 4 Position |
Drain to Source Resistance (on) (Rds) | 0.5 Ω |
Polarity | P-Channel |
Power Dissipation | 1.3 W |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | -1.10 A |
Input Capacitance (Ciss) | 270pF @25V(Vds) |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.3 W |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 6.29 mm |
Size-Height | 3.37 mm |
Operating Temperature | -55℃ ~ 175℃ |
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.
●Features:
● Dynamic dV/dt Rating
● Repetitive Avalanche Rated
● For Automatic Insertion
● End Stackable
● P-Channel
● 175°C Operating Temperature
● Fast Switching
● Lead (Pb)-Free Available
Vishay Semiconductor
2 Pages / 0.19 MByte
Vishay Semiconductor
9 Pages / 1.7 MByte
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