| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 320 mA |
| Case/Package | DIP-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 4.4 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 320 mA |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 350pF @25V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Single N-Channel 600 V 4.4 Ohms Through Hole Power Mosfet - HVMDIP
VISHAY
9 Pages / 1.15 MByte
Vishay Siliconix
MOSFET N-CH 600V 320mA 4-DIP
Vishay Semiconductor
MOSFET N-CH 600V 320mA 4-DIP
International Rectifier
600V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
VISHAY
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
Vishay Siliconix
MOSFET N-CH 600V 320mA 4-DIP
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
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