TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | PowerVDFN-8 |
Power Rating | 3.6 W |
Number of Channels | 1 Channel |
Polarity | N-Channel |
Power Dissipation | 3.6W (Ta), 104W (Tc) |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 29A |
Rise Time | 30 ns |
Input Capacitance (Ciss) | 3635pF @25V(Vds) |
Fall Time | 12 ns |
Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Width | 5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Low RDSon (less than 1.15 mO)
● Low Thermal Resistance to PCB (less than 0.8°C/W)
● 100% Rg tested
● Low Profile (less than 0.9 mm)
● Industry-Standard Pinout
● Compatible with Existing Surface Mount Techniques
● Qualified Industrial
● Qualified MSL1
Infineon
9 Pages / 0.23 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
14 Pages / 0.57 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
30V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package
International Rectifier
Single N-Channel 30V 3.6W 26NC SMT HexFet Power Mosfet - PQFN 5 x 6mm
International Rectifier
Trans MOSFET N-CH 30V 32A 8Pin PQFN EP T/R
International Rectifier
Single N-Channel 30V 3.6W 29NC SMT Hexfet Power Mosfet - PQFN 5 x 6mm
International Rectifier
30V Single N-Channel HEXFET Power MOSFET with an integrated Schottky Diode in a 5mm X 6mm PQFN package
Infineon
30V Single N-Channel HEXFET Power MOSFET with an integrated Schottky Diode in a 5mm X 6mm PQFN package
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.