| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 1.80 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Rise Time | 9 ns |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
DESCRIPTION
●Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
●■ TYPICAL RDS(on)= 1.8Ω
●■ EXTREMELY HIGH dv/dt CAPABILITY
●■ 100% AVALANCHE TESTED
●■ VERY LOW INTRINSIC CAPACITANCES
●■ GATE CHARGE MINIMIZED
●APPLICATIONS
●■ HIGH CURRENT, HIGH SPEED SWITCHING
●■ SWITCH MODE POWER SUPPLIES (SMPS)
●■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
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