TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 42 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.052 Ω |
Polarity | N-Channel |
Power Dissipation | 42 W |
Threshold Voltage | 4 V |
Input Capacitance | 1400 pF |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Continuous Drain Current (Ids) | 20A |
Rise Time | 39 ns |
Input Capacitance (Ciss) | 1400pF @25V(Vds) |
Input Power (Max) | 54 W |
Fall Time | 33 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 54W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.63 mm |
Size-Width | 4.4 mm |
Size-Height | 8.9 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFI540NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Isolated package
● 2.5kVrms High voltage isolation
● 4.8mm Sink to lead creepage distance
● Fully avalanche rated
Infineon
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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2 Pages / 0.06 MByte
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