TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220 |
Power Rating | 40 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.55 Ω |
Polarity | N-Channel |
Power Dissipation | 40 W |
Threshold Voltage | 4 V |
Input Capacitance | 1370pF @25V |
Drain to Source Voltage (Vds) | 400 V |
Breakdown Voltage (Drain to Source) | 400 V |
Continuous Drain Current (Ids) | 5.40 A |
Input Capacitance (Ciss) | 1370pF @25V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 40 W |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 10.63 mm |
Size-Height | 9.8 mm |
Operating Temperature | -55℃ ~ 150℃ |
The IRFI740GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
● Isolated package
● 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
● 4.8mm Sink to lead creepage distance
● Dynamic dV/dt rating
● Low thermal resistance
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