| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Power Dissipation | 42W (Tc) |
| Drain to Source Voltage (Vds) | 100 V |
| Input Capacitance (Ciss) | 860pF @25V(Vds) |
| Power Dissipation (Max) | 42W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Width | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
P-Channel 100V 7.7A (Tc) 42W (Tc) Through Hole TO-220-3
Vishay Siliconix
8 Pages / 0.53 MByte
Vishay Siliconix
3 Pages / 0.05 MByte
VISHAY
TO-220-3P-CH 100V 7.7A 300mΩ
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.3Ω; ID -7.7A; TO-220 Full-Pak; PD 42W
Vishay Siliconix
MOSFET P-CH 100V 7.7A TO220FP
International Rectifier
MOSFET P-CH 100V 7.7A TO220FP
Vishay Siliconix
MOSFET P-CH 100V 7.7A TO220FP
Vishay Semiconductor
Trans MOSFET P-CH 100V 7.7A 3Pin(3+Tab) TO-220FP
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
IRF
Power MOSFET(Vdss=-100V, Rds(on)=0.3Ω, Id=-7.7A)
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