| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -7.70 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.3 Ω |
| Polarity | P-Channel |
| Power Dissipation | 42 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | -100 V |
| Continuous Drain Current (Ids) | -7.70 A |
| Rise Time | 52 ns |
| Isolation Voltage | 2.50 kV |
| Input Capacitance (Ciss) | 860pF @25V(Vds) |
| Input Power (Max) | 42 W |
| Fall Time | 39 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 42 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Height | 9.8 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Minimum Packing Quantity | 50 |
The IRFI9530GPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
● Isolated package
● 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
● 4.8mm Sink to lead creepage distance
● -55 to 175°C Operating temperature range
● Dynamic dV/dt rating
● Low thermal resistance
VISHAY
8 Pages / 0.53 MByte
VISHAY
8 Pages / 0.53 MByte
VISHAY
TO-220-3P-CH 100V 7.7A 300mΩ
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Trans MOSFET P-CH 100V 7.7A 3Pin(3+Tab) TO-220FP
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Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3
IRF
Power MOSFET(Vdss=-100V, Rds(on)=0.3Ω, Id=-7.7A)
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