| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 5.50 A |
| Polarity | N-Channel |
| Power Dissipation | 60.0 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 5.50 A |
| Rise Time | 25.0 ns |
Applications
●Switch Mode Power Supply ( SMPS )
●Uninterruptable Power Supply
●High speed power switching
●High Voltage Isolation = 2.5KVRMS
●Benefits
●Low Gate Charge Qg results in Simple Drive Requirement
●Improved Gate, Avalanche and dynamic dv/dt Ruggedness
●Fully Characterized Capacitance and Avalanche Voltage and Current
International Rectifier
8 Pages / 0.11 MByte
International Rectifier
8 Pages / 0.14 MByte
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Power MOSFET, N Channel, 5.5A, 600V, 750mohm, 10V, 4V
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Trans MOSFET N-CH 600V 5.5A 3Pin(3+Tab) TO-220
International Rectifier
MOSFET N-CH 600V 5.5A TO220FP
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MOSFET N-CH 600V 5.5A TO220FP
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Vishay Intertechnology
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3
IRF
Power MOSFET(Vdss=600V, Rds(on)max=0.75Ω, Id=5.5A)
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