TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | TO-220-3 |
Power Dissipation | 30W (Tc) |
Drain to Source Voltage (Vds) | 900 V |
Input Capacitance (Ciss) | 490pF @25V(Vds) |
Power Dissipation (Max) | 30W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 900V 1.2A (Tc) 30W (Tc) Through Hole TO-220-3
Vishay Siliconix
8 Pages / 1.64 MByte
VISHAY
TO-220-3 N-CH 900V 1.2A 8Ω
Vishay Semiconductor
VISHAY IRFIBF20GPBF Power MOSFET, N Channel, 1.2A, 900V, 8Ω, 10V, 4V
Vishay Siliconix
MOSFET N-CH 900V 1.2A TO220FP
Vishay Siliconix
MOSFET N-CH 900V 1.2A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 900V 1.2A 3Pin(3+Tab) TO-220FP
International Rectifier
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagey
Vishay Intertechnology
Power Field-Effect Transistor, 1.2A I(D), 900V, 8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3
Vishay Intertechnology
Power Field-Effect Transistor, 1.2A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
IRF
Power MOSFET(Vdss=900V, Rds(on)=8Ω, Id=1.2A)
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.