| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 14.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 70 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 29 W |
| Part Family | IRFIZ24N |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 14.0 A |
| Rise Time | 34.0 ns |
| Input Capacitance (Ciss) | 370pF @25V(Vds) |
| Input Power (Max) | 29 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ |
Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●Advanced Process Technology
●Isolated Package
●High Voltage Isolation = 2.5KVRMS
●Sink to Lead Creepage Dist. = 4.8mm
●Fully Avalanche Rated
●Lead-Free
International Rectifier
9 Pages / 0.23 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
2 Pages / 0.06 MByte
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