| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 700 V |
| Current Rating | 7.50 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 115 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 700 V |
| Breakdown Voltage (Drain to Source) | 700 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 4.00 A |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 1370pF @25V(Vds) |
| Input Power (Max) | 115 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 115W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | -55℃ ~ 150℃ |
DESCRIPTION
●The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs in cluding revolutionary MDmesh™ products.
●■ TYPICAL RDS(on) = 1.0 Ω
●■ EXTREMELY HIGH dv/dt CAPABILITY
●■ IMPROVED ESD CAPABILITY
●■ 100% AVALANCHE RATED
●■ GATE CHARGE MINIMIZED
●■ VERY LOW INTRINSIC CAPACITANCES
●■ VERY GOOD MANUFACTURING REPEATIBILITY
●APPLICATIONS
●■ HIGH CURRENT, HIGH SPEED SWITCHING
●■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
ST Microelectronics
14 Pages / 0.65 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
N-CHANNEL 700V 1Ω 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
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