| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 39.0 A |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 43 W |
| Part Family | IRFIZ48V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 39.0 A |
| Rise Time | 200 ns |
| Input Capacitance (Ciss) | 1985pF @25V(Vds) |
| Input Power (Max) | 43 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
Description
●Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●Advanced Process Technology
●Ultra Low On-Resistance
●Isolated Package
●High Voltage Isolation = 2.5KVRMS
●Fast Switching
●Fully Avalanche Rated
●Optimized for SMPS Applications
International Rectifier
9 Pages / 0.2 MByte
International Rectifier
9 Pages / 0.09 MByte
International Rectifier
HEXFET® Power MOSFET VDSS= 55V RDS(on)= 0.016Ω ID= 36A
IRF
Power MOSFET(Vdss=55V, Rds(on)=0.016Ω, Id=36A)
VISHAY
TO-220-3 N-CH 60V 37A 18mΩ
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.016Ω; ID 36A; TO-220 Full-Pak; PD 42W; -55de
International Rectifier
MOSFET N-CH 55V 36A TO220FP
International Rectifier
Trans MOSFET N-CH Si 60V 39A 3Pin(3+Tab) TO-220FP
Vishay Semiconductor
Trans MOSFET N-CH 60V 37A 3Pin(3+Tab) TO-220FP
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