| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 2.8 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0462 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.8 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 340pF @25V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 5.1A |
| Rise Time | 21 ns |
| Input Capacitance (Ciss) | 340pF @25V(Vds) |
| Fall Time | 23 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRFL024ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
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IRF
Power MOSFET(Vdss=55V, Rds(on)=0.075Ω, Id=2.8A)
International Rectifier
Trans MOSFET N-CH 55V 5.1A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
Trans MOSFET N-CH 55V 4A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.075Ω; ID 2.8A; SOT-223; PD 1W; VGS +/-20V
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 46.2 Milliohms; ID 5.1A; SOT-223; PD 1W; VF 1.3V
International Rectifier
MOSFET N-CH 55V 2.8A SOT223
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