| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| Polarity | N-CH |
| Power Dissipation | 120W (Tc) |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 53A |
| Input Capacitance (Ciss) | 1500pF @25V(Vds) |
| Power Dissipation (Max) | 120W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
9 Pages / 1.5 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.028Ω, ID = 57A
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.028Ω, Id=57A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.02Ω; ID 53A; TO-247AC; PD 120W; VGS +/-20V
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MOSFET N-CH 55V 53A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 60V 57A 3Pin(3+Tab) TO-247AC
Vishay Siliconix
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N-Channel 55V 0.02Ω 61NC Flange Mount Hexfet Power Mosfet - TO-247AC
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