| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 53.0 A |
| Case/Package | TO-247 |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Part Family | IRFP044N |
| Drain to Source Voltage (Vds) | 55.0 V |
| Breakdown Voltage (Drain to Source) | 55.0V (min) |
| Continuous Drain Current (Ids) | 53.0 A |
| Rise Time | 80.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
●extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●l Advanced Process Technology
●l Dynamic dv/dt Rating
●l 175°C Operating Temperature
●l Fast Switching
●l Fully Avalanche Rated
International Rectifier
8 Pages / 0.09 MByte
International Rectifier
9 Pages / 0.1 MByte
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.028Ω, ID = 57A
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.028Ω, Id=57A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.02Ω; ID 53A; TO-247AC; PD 120W; VGS +/-20V
International Rectifier
MOSFET N-CH 55V 53A TO-247AC
Vishay Siliconix
MOSFET N-CH 60V 57A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 60V 57A 3Pin(3+Tab) TO-247AC
IFC
N-Channel 55V 0.02Ω 61NC Flange Mount Hexfet Power Mosfet - TO-247AC
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