| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 81.0 A |
| Case/Package | TO-247-3 |
| Drain to Source Resistance (on) (Rds) | 0.012 Ω |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Part Family | IRFP054N |
| Threshold Voltage | 4 V |
| Input Capacitance | 2900pF @25V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 81.0 A |
| Rise Time | 66.0 ns |
| Input Capacitance (Ciss) | 2900pF @25V(Vds) |
| Input Power (Max) | 170 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●N-Channel Power MOSFET 80A to 99A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
9 Pages / 1.45 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
MOSFET N-CH 60V 70A TO-247AC
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MOSFET N-CH 60V 70A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 60V 70A 3Pin(3+Tab) TO-247AC
Infineon
Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.014Ω, Id=70*A)
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TO-247-3 N-CH 60V 70A 14mΩ
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.012Ω; ID 81A; TO-247AC; PD 170W; VGS +/-20V
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