| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 200 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.042 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2400 pF |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Continuous Drain Current (Ids) | 43A |
| Rise Time | 55 ns |
| Thermal Resistance | 0.75℃/W (RθJC) |
| Input Capacitance (Ciss) | 2400pF @25V(Vds) |
| Fall Time | 69 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP3415PBF is a HEXFET® fifth generation N-channel Power MOSFET utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
● Advanced process technology
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
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International Rectifier
MOSFET N-CH 150V 43A TO-247AC
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.042Ω; ID 43A; TO-247AC; PD 200W; VGS +/-20V
IFA
N-Channel 150V 42mΩ 200NC Flange Mount Hexfet Power Mosfet - TO-247AC
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