| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 2.1 W |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | N-CH |
| Power Dissipation | 2.1 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 2.2A |
| Rise Time | 18 ns |
| Input Capacitance (Ciss) | 330pF @25V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFL4310TRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
● Dynamic dV/dt rating
● Ease of paralleling
● Advanced process technology
● Low static drain-to-source ON-resistance
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International Rectifier
Trans MOSFET N-CH 100V 2.2A 4Pin(3+Tab) SOT-223
International Rectifier
Trans MOSFET N-CH 100V 2.2A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ω; ID 1.6A; SOT-223; PD 1W; VGS +/-20V; -55
International Rectifier
Trans MOSFET N-CH 100V 2.2A 4Pin(3+Tab) SOT-223 T/R
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