| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 310 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0045 Ω |
| Polarity | N-Channel |
| Power Dissipation | 310 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 75 V |
| Breakdown Voltage (Drain to Source) | 75 V |
| Continuous Drain Current (Ids) | 170A |
| Rise Time | 140 ns |
| Input Capacitance (Ciss) | 7500pF @25V(Vds) |
| Fall Time | 100 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 310W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
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International Rectifier
MOSFET MOSFT 75V 170A 4.5mOhm 180NC Qg
IRF
HEXFET Power MOSFET Die in Wafer Form
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 4.5Milliohms; ID 209A; TO-247AC; PD 470W; -55de
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 4.5Milliohms; ID 170A; TO-247AC; PD 310W; -55de
International Rectifier
HEXFET Power MOSFET Die in Wafer Form
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