| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 400 V |
| Current Rating | 16.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.3 Ω |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 400 V |
| Breakdown Voltage (Drain to Source) | 400 V |
| Continuous Drain Current (Ids) | 16.0 A |
| Rise Time | 54 ns |
| Input Capacitance (Ciss) | 2200pF @25V(Vds) |
| Input Power (Max) | 190 W |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFP350LCPBF is a HEXFET® N-channel low charge Power MOSFET achieves significantly lower gate charge over conventional MOSFET. Utilizing advanced HEXFET® technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. This device improvement combined with the proven ruggedness and reliability of HEXFET® is offer the designer a new standard in power transistors for switching applications.
● Ultra-low gale charge
● Reduced gate drive requirement
● Enhanced 30V Vp rating
● Reduced CISS, COSS and CRSS
● Isolated central mounting hole
● Dynamic dV/dt rating
● Repetitive avalanche rating
VISHAY
9 Pages / 1.27 MByte
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8 Pages / 1.9 MByte
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