| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 180 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.025 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 3000pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 57A |
| Rise Time | 59 ns |
| Input Capacitance (Ciss) | 3000pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Fall Time | 48 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
Infineon
9 Pages / 0.22 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.03 MByte
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1 Pages / 0.12 MByte
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRF
Power MOSFET(Vdss=100V, Rds(on)=0.0.5W(1/2W), Id=57A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.025Ω; ID 57A; TO-247AC; PD 200W; VGS +/-20V
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