| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 200 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.014 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 6160 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 75A |
| Rise Time | 130 ns |
| Input Capacitance (Ciss) | 6160pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Fall Time | 38 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
12 Pages / 0.64 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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2 Pages / 0.06 MByte
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1 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 100V 75A 3Pin (3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=100V, Rds(on)max=0.014Ω, Id=75A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.011Ω; ID 75A; TO-220AB; PD 200W; VGS +/-20V
Infineon
Trans MOSFET N-CH 100V 75A 3Pin(3+Tab) TO-220AB
IFA
N-Channel 100V 0.014Ω 110NC Flange Mount Hexfet Power Mosfet - TO-220AB
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