TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 47.0 A |
Case/Package | SUPER-247 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.078 Ω |
Polarity | N-Channel |
Power Dissipation | 540 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Continuous Drain Current (Ids) | 47.0 A |
Rise Time | 140 ns |
Input Capacitance (Ciss) | 8310pF @25V(Vds) |
Fall Time | 74 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 540 W |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 16.1 mm |
Size-Width | 5.3 mm |
Size-Height | 20.8 mm |
Operating Temperature | -55℃ ~ 150℃ |
The IRFPS43N50KPBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
● Simple drive requirements
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
● Low RDS (ON)
Vishay Semiconductor
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