| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 140 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0058 Ω |
| Polarity | N-CH |
| Power Dissipation | 140 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 91A |
| Rise Time | 76 ns |
| Input Capacitance (Ciss) | 2840pF @25V(Vds) |
| Input Power (Max) | 140 W |
| Fall Time | 48 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 140W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR1010ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
11 Pages / 0.32 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 5.8Milliohms; ID 42A; D-Pak (TO-252AA); -55deg
International Rectifier
Trans MOSFET N-CH 55V 91A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 55V 91A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH Si 55V 91A 3Pin(2+Tab) DPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
