| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 42.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 5.80 mΩ |
| Part Family | IRFR1010Z |
| Drain to Source Voltage (Vds) | 55.0 V |
| Breakdown Voltage (Drain to Source) | 55.0V (min) |
| Continuous Drain Current (Ids) | 42.0 A |
| Rise Time | 76.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
●Features
●• Advanced Process Technology
●• Ultra Low On-Resistance
●• 175°C Operating Temperature
●• Fast Switching
●• Repetitive Avalanche Allowed up to Tjmax
International Rectifier
11 Pages / 0.27 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 5.8Milliohms; ID 42A; D-Pak (TO-252AA); -55deg
International Rectifier
Trans MOSFET N-CH 55V 91A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 55V 91A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH Si 55V 91A 3Pin(2+Tab) DPAK
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