| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 2.60 A |
| Case/Package | TO-252 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 25 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 140pF @25V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 2.60 A |
| Rise Time | 17 ns |
| Fall Time | 8.9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRFR210PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
● Dynamic dV/dt rating
● Ease of paralleling
● Surface-mount
● Repetitive avalanche rated
Vishay Semiconductor
4 Pages / 0.51 MByte
Vishay Semiconductor
10 Pages / 0.78 MByte
Vishay Semiconductor
2 Pages / 0.15 MByte
International Rectifier
Transistor NPN MOS IRFR210 INTERNATIONAL RECTIFIER Ampere=2.6V=200 TO252/DPAK
VISHAY
MOSFET N-CH 200V 2.6A DPAK
Vishay Siliconix
MOSFET N-CH 200V 2.6A DPAK
Vishay Semiconductor
Trans MOSFET N-CH 200V 2.6A 3Pin(2+Tab) DPAK
VISHAY
TO-252-3 N-CH 200V 2.6A 1.5Ω
VISHAY
TO-252-3 N-CH 200V 2.6A 1.5Ω
Vishay Siliconix
MOSFET N-CH 200V 2.6A DPAK
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 1.5Ω; ID 2.6A; TO-252AA; PD 25W; VGS +/-20V
VISHAY
TO-252-3 N-CH 200V 2.6A 1.5Ω
Vishay Siliconix
Trans MOSFET N-CH 200V 2.6A 3Pin(2+Tab) DPAK T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
