| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 143 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0111 Ω |
| Polarity | N-Channel |
| Power Dissipation | 143 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 63A |
| Rise Time | 42 ns |
| Input Capacitance (Ciss) | 3031pF @50V(Vds) |
| Fall Time | 34 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 143W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR4510PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
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