| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 4.4 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 350pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 2000 |
IRFRC20 Series N-Channel 600 V 4.4 Ohm 2.5 W Power Mosfet - DPAK (TO-252)
VISHAY
12 Pages / 1.11 MByte
VISHAY
11 Pages / 1.08 MByte
Vishay Intertechnology
Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
VISHAY
TO-252-3 N-CH 600V 2A 4.4Ω
Vishay Semiconductor
VISHAY IRFRC20PBF Power MOSFET, N Channel, 2A, 600V, 4.4Ω, 10V, 4V
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