| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 370 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0025 Ω |
| Polarity | N-Channel |
| Power Dissipation | 370 W |
| Threshold Voltage | 2.35 V |
| Drain to Source Voltage (Vds) | 75 V |
| Continuous Drain Current (Ids) | 230A |
| Rise Time | 110 ns |
| Input Capacitance (Ciss) | 9370pF @50V(Vds) |
| Fall Time | 100 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 370000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFS3107PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
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37 Pages / 2.01 MByte
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3 Pages / 0.12 MByte
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75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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Transistor: N-MOSFET; unipolar; HEXFET; 75V; 260A; 370W; D2PAK-7
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