| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Output Current | ≤2.50 A |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.005 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.25 V |
| Input Capacitance | 4500pF @20V |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40 V |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 4500pF @20V(Vds) |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7842PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. The synchronous MOSFET is suitable for Notebook processor power, isolated and non-isolated DC-to-DC converters.
● Low gate charge
● Fully characterized avalanche voltage and current
● Ultra-low gate impedance
● Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
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