| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 110 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.034 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1690 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 31A |
| Rise Time | 27 ns |
| Input Capacitance (Ciss) | 1690pF @25V(Vds) |
| Input Power (Max) | 3 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3W (Ta), 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR3410TRPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
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