| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Power Rating | 38 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.175 Ω |
| Polarity | P-Channel |
| Power Dissipation | 38 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 350 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 11A |
| Rise Time | 55 ns |
| Input Capacitance (Ciss) | 350pF @25V(Vds) |
| Input Power (Max) | 38 W |
| Fall Time | 37 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 38W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 2.39 mm |
| Size-Height | 6.22 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
● Ultra low on-resistance
● Advanced process technology
● Fully avalanche rated
Infineon
11 Pages / 1.35 MByte
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270 Pages / 11.59 MByte
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7 Pages / 0.14 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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6 Pages / 0.15 MByte
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Infineon
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3
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International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.175Ω; ID -11A; I-Pak (TO-251AA); PD 38W
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