| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 190 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.011 Ω |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 3550 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 73A |
| Rise Time | 87 ns |
| Input Capacitance (Ciss) | 3550pF @50V(Vds) |
| Input Power (Max) | 190 W |
| Fall Time | 70 ns |
| Operating Temperature (Max) | 175 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFS4610TRLPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
11 Pages / 0.38 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
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6 Pages / 0.15 MByte
International Rectifier
MOSFET N-CH 100V 73A D2PAK
International Rectifier
Trans MOSFET N-CH 100V 73A 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans MOSFET N-CH 100V 73A 3Pin(2+Tab) D2PAK
International Rectifier
Trans MOSFET N-CH 100V 73A 3Pin(2+Tab) D2PAK T/R
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