| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Power Rating | 43 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 600 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 43 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 300 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 5A |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 300pF @25V(Vds) |
| Input Power (Max) | 43 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 43W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 2.38 mm |
| Size-Height | 6.22 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFU220NPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
Infineon
11 Pages / 0.21 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.15 MByte
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