| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251 |
| Power Rating | 25 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 3.6 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 400 V |
| Continuous Drain Current (Ids) | 1.70 A |
| Rise Time | 9.90 ns |
| Input Capacitance (Ciss) | 170pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 2.38 mm |
| Size-Height | 6.22 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 3000 |
The IRFU310PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
● Dynamic dV/dt rating
● Ease of paralleling
● Straight lead
● Repetitive avalanche rated
VISHAY
11 Pages / 0.78 MByte
VISHAY
11 Pages / 0.78 MByte
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